Current-voltage characteristics simulation of semiconductor devices using domain decomposition
DOI10.1006/JCPH.1995.1115zbMath0822.65116OpenAlexW2053444560WikidataQ56996622 ScholiaQ56996622MaRDI QIDQ1893746
Stefano Micheletti, Riccardo Sacco, Alfio M. Quarteroni
Publication date: 2 August 1995
Published in: Journal of Computational Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1006/jcph.1995.1115
finite elementsnumerical examplesdomain decompositionsemiconductor devicescurrent-voltage characteristicsblock nonlinear Gauss-Seidel procedure
Multigrid methods; domain decomposition for boundary value problems involving PDEs (65N55) PDEs in connection with optics and electromagnetic theory (35Q60) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05)
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