Mixed finite volume methods for semiconductor device simulation (Q4342160)
From MaRDI portal
!
This is the item page for this Wikibase entity, intended for internal use and editing purposes. Please use the normal view instead:
scientific article; zbMATH DE number 1028937
| Language | Label | Description | Also known as |
|---|---|---|---|
| default for all languages | No label defined |
||
| English | Mixed finite volume methods for semiconductor device simulation |
scientific article; zbMATH DE number 1028937 |
Statements
6 July 1998
0 references
mixed finite volume methods
0 references
numerical examples
0 references
drift-diffusion equations
0 references
semiconductor device simulation
0 references
Gummel iteration procedure
0 references
nonlinear Poisson equation
0 references
finite elements
0 references
0 references
0 references
0 references
0 references
0 references
Mixed finite volume methods for semiconductor device simulation (English)
0 references
0.8491969108581543
0 references
0.8398867845535278
0 references
0.8367394208908081
0 references