MIXED FINITE ELEMENT APPROACH AND NONLINEAR IMPLICIT SCHEMES FOR DRIFT‐DIFFUSION EQUATION SOLUTION OF 2D HETEROJUNCTION SEMICONDUCTOR DEVICES (Q4835953)

From MaRDI portal

!

This is the item page for this Wikibase entity, intended for internal use and editing purposes. Please use the normal view instead:

scientific article; zbMATH DE number 762201
Language Label Description Also known as
default for all languages
No label defined
    English
    MIXED FINITE ELEMENT APPROACH AND NONLINEAR IMPLICIT SCHEMES FOR DRIFT‐DIFFUSION EQUATION SOLUTION OF 2D HETEROJUNCTION SEMICONDUCTOR DEVICES
    scientific article; zbMATH DE number 762201

      Statements

      MIXED FINITE ELEMENT APPROACH AND NONLINEAR IMPLICIT SCHEMES FOR DRIFT‐DIFFUSION EQUATION SOLUTION OF 2D HETEROJUNCTION SEMICONDUCTOR DEVICES (English)
      0 references
      13 November 1995
      0 references
      finite element
      0 references
      nonlinear implicit schemes
      0 references
      drift-diffusion equation
      0 references
      boundary value problems
      0 references
      semiconductor equations
      0 references
      existence
      0 references
      uniqueness
      0 references
      stability
      0 references
      error estimates
      0 references
      convergence
      0 references
      heterojunction bipolar transistor
      0 references

      Identifiers

      0 references
      0 references
      0 references
      0 references
      0 references
      0 references
      0 references
      0 references
      0 references
      0 references