A shock-capturing upwind discretization method for characterization of SiC MESFETs

DOI10.1142/S0219876208001509MaRDI QIDQ3174503zbMATH OpenOpenAlexFDO

Authors H. Arabshahi, M. R. Benam

Publication date 14 October 2011

Published in International Journal of Computational Methods (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1142/s0219876208001509

zbMATH Keywords

discretizationdrift-diffusionhydrodynamicshock-capturing

Mathematics Subject Classification ID

Finite difference methods applied to problems in fluid mechanics (76M20) Statistical mechanics of semiconductors (82D37)

Recommendations

• Full hydrodynamic simulation of GaAs MESFETs
• A STREAMLINE-UPWINDING/PETROV-GALERKIN METHOD FOR THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL
• Efficient implementation of the convective terms in the hydrodynamic equations
• Simulation of MESFET device by streamline‐diffusion finite element methods
• 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle

Cites work

• MONTE CARLO SIMULATIONS OF STEADY-STATE TRANSPORT IN WURTZITE PHASE GaN SUBMICROMETER n⁺nn⁺ DIODE
• On the FACR(l) algorithm for the discrete Poisson equation
• Time-domain simulation of the full hydrodynamic model

Cited in

(2)

• Hydrodynamic modeling of short-channel devices using an upwind flux vector splitting scheme.
• Numerical simulation of the process of formation of shock waves in electron gas in a field-effect transistor

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