Upwind finite volume element methods for one-dimensional semiconductor device
DOI10.1007/S11424-011-9021-4zbMATH Open1271.65125OpenAlexW2057786269MaRDI QIDQ2392657FDOQ2392657
Authors: Chuanjun Chen, Wei Liu, Daigang Lu 
Publication date: 2 August 2013
Published in: Journal of Systems Science and Complexity (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/s11424-011-9021-4
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convergencenumerical experimentsdiffusion equationerror estimatesemiconductor deviceupwind schemefinite volume element method
Initial-boundary value problems for second-order parabolic equations (35K20) PDEs in connection with statistical mechanics (35Q82) Finite volume methods for initial value and initial-boundary value problems involving PDEs (65M08) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Error bounds for initial value and initial-boundary value problems involving PDEs (65M15) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Statistical mechanics of semiconductors (82D37)
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- Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I
Cited In (6)
- Efficient algorithm based on two-grid method for semiconductor device problem
- SEMICONDUCTOR DEVICE MODELING USING FLUX UPWIND FINITE ELEMENTS
- Modified upwind finite volume scheme for semiconductor device
- A block-centered upwind approximation of the semiconductor device problem on a dynamically changing mesh
- A kind of upwind finite volume element method for the transient behavior of a semiconductor device with heat conduction
- Title not available (Why is that?)
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