scientific article; zbMATH DE number 4016133
zbMATH Open0625.65124MaRDI QIDQ3028280FDOQ3028280
Authors: Jim jun. Douglas, Yirang Yuan 
Publication date: 1987
Title of this publication is not available (Why is that?)
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convergencequasilinearpotential equationsemiconductor devicemethod of characteristicsimplicit finite difference methodfive-point difference method
Technical applications of optics and electromagnetic theory (78A55) Partial differential equations of mathematical physics and other areas of application (35Q99) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Numerical aspects of the method of characteristics for initial value and initial-boundary value problems involving PDEs (65M25) Motion of charged particles (78A35) Applications to the sciences (65Z05)
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- A positivity-preserving, linear, energy stable and convergent numerical scheme for the Poisson-Nernst-Planck (PNP) system
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- An approximation of semiconductor device by mixed finite element method and characteristics-mixed finite element method
- A positivity preserving and free energy dissipative difference scheme for the Poisson-Nernst-Planck system
- Finite volume element approximation and analysis for a kind of semiconductor device simulation
- Superconvergence of characteristics marker and cell scheme for the Navier-Stokes equations on nonuniform grids
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- A finite difference scheme for two-dimensional semiconductor device of heat conduction on composite triangular grids
- Superconvergence analysis of finite element method for nonlinear semiconductor device problem
- An upwind-block-centered finite difference method for a semiconductor device of heat conduction and its numerical analysis
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- Characteristic finite difference fractional step methods for three-dimensional semiconductor device of heat conduction
- Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence
- Finite-difference numerical methods for solving the energy-momentum transport equations in two-valley semiconductors
- A block-centered upwind approximation of the semiconductor device problem on a dynamically changing mesh
- A finite difference scheme for a semiconductor device problem on grids with local refinement in time and space
- Finite difference fractional step methods for the transient behavior of a semiconductor device
- Upwind finite volume element methods for one-dimensional semiconductor device
- Two-grid method for semiconductor device problem by mixed finite element method and characteristics finite element method
- New additive difference method for solving semiconductor problems
- Accelerating the transient simulation of semiconductor devices using filter-bank transforms
- An approximation of semiconductor device of heat conduction by mixed finite element method and characteristics-mixed finite element method
- Mathematical Model, Numerical Simulation and Convergence Analysis of a Semiconductor Device Problem with Heat and Magnetic Influences
- Upwind block-centered multistep differences for semiconductor device problem with heat and magnetic influences
- A mixed-finite volume element coupled with the method of characteristic fractional step difference for simulating transient behavior of semiconductor device of heat conductor and its numerical analysis
- The modified method of characteristics with mixed finite element domain decomposition procedures for the transient behavior of a semiconductor device
- On the inclusion of the recombination term in discretizations of the semiconductor device equations
- Numerical analysis for systems with memory arising from semiconductor simulations
- Analysis on block-centered finite differences of numerical simulation of semiconductor device detector
- Numerical method and analysis of computational fluid mechanics for photoelectric semiconducting detector
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- An energy preserving finite difference scheme for the Poisson-Nernst-Planck system
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