Two-grid method for semiconductor device problem by mixed finite element method and characteristics finite element method

DOI10.3934/ERA.2020095MaRDI QIDQ2220728zbMATH OpenOpenAlexFDO

Authors Ying Liu, Yanping Chen, Yunqing Huang, Yang Wang

Publication date 25 January 2021

Published in Electronic Research Archive (Search for Journal in Brave)

Full work available at URL https://doi.org/10.3934/era.2020095

zbMATH Keywords

two-grid methodmixed finite element methodsemiconductor devicecharacteristics finite element method\(L^q\) error estimates

Mathematics Subject Classification ID

Numerical computation of solutions to systems of equations (65H10) Electro- and magnetostatics (78A30) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Multigrid methods; domain decomposition for initial value and initial-boundary value problems involving PDEs (65M55) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Initial-boundary value problems for PDEs of mixed type (35M13) Statistical mechanics of semiconductors (82D37) PDEs in connection with semiconductor devices (35Q81)

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Cited in

(4)

• Analysis of a two-grid method for semiconductor device problem
• Efficient algorithm based on two-grid method for semiconductor device problem
• An approximation of semiconductor device by mixed finite element method and characteristics-mixed finite element method
• scientific article; zbMATH DE number 1910730 (Why is no real title available?)

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