Two-grid method for semiconductor device problem by mixed finite element method and characteristics finite element method
DOI10.3934/ERA.2020095zbMATH Open1456.65119OpenAlexW3084628579MaRDI QIDQ2220728FDOQ2220728
Authors: Ying Liu, Yanping Chen, Yunqing Huang, Yang Wang 
Publication date: 25 January 2021
Published in: Electronic Research Archive (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.3934/era.2020095
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two-grid methodmixed finite element methodsemiconductor devicecharacteristics finite element method\(L^q\) error estimates
Numerical computation of solutions to systems of equations (65H10) Electro- and magnetostatics (78A30) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Multigrid methods; domain decomposition for initial value and initial-boundary value problems involving PDEs (65M55) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Initial-boundary value problems for PDEs of mixed type (35M13) Statistical mechanics of semiconductors (82D37) PDEs in connection with semiconductor devices (35Q81)
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Cited In (4)
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