The modified method of characteristics with mixed finite element domain decomposition procedures for the transient behavior of a semiconductor device
DOI10.1002/NUM.20625zbMATH Open1231.82086OpenAlexW1988061875MaRDI QIDQ3112435FDOQ3112435
Authors: Yirang Yuan 
Publication date: 10 January 2012
Published in: Numerical Methods for Partial Differential Equations (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1002/num.20625
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Cites Work
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Cited In (8)
- Galerkin alternating-direction methods for nonrectangular regions for the transient behavior of a semiconductor device
- Title not available (Why is that?)
- An approximation of semiconductor device by mixed finite element method and characteristics-mixed finite element method
- The characteristic finite element alternating-direction method with moving meshes for the transient behavior of a semiconductor device
- Title not available (Why is that?)
- Title not available (Why is that?)
- An Approximation of Three-Dimensional Semiconductor Devices by Mixed Finite Element Method and Characteristics-Mixed Finite Element Method
- Theory and applications of domain decomposition with characteristic mixed finite element of three-dimensional semiconductor transient problem of heat conduction
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