Galerkin alternating-direction methods for nonrectangular regions for the transient behavior of a semiconductor device

zbMath1081.82026MaRDI QIDQ2574295

Yi-Rang Yuan

Publication date: 21 November 2005

Published in: Journal of Systems Science and Complexity (Search for Journal in Brave)

zbMATH Keywords

error estimate; characteristic finite element; semiconductor device; non-rectangular region; alternating-direction; drift-diffusion model with heat conduction

Mathematics Subject Classification ID

82D37: Statistical mechanics of semiconductors

65M60: Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs

65M25: Numerical aspects of the method of characteristics for initial value and initial-boundary value problems involving PDEs

65M15: Error bounds for initial value and initial-boundary value problems involving PDEs