Galerkin alternating-direction methods for nonrectangular regions for the transient behavior of a semiconductor device (Q2574295)

The paper is devoted to the numerical analysis of the drift-diffusion model for semiconductors with heat conduction. The equations are treated on a two-dimensional spatial domain with homogeneous Dirichlet boundary conditions for the electrostatic potential and homogeneous Neumann boundary conditions for the electron and hole concentration as well as for the temperature. A kind of modified method of characteristics with alternating-direction finite element procedure for non-rectangular region and non-periodic problems is presented. Techniques, such as calculus of variations, isoparametric transformation, path approximation, operator-splitting, characteristic methods, symmetrical reflection, energy methods, negative norm estimates and a prior estimates are employed. Moreover, error estimates in \(L^2\) norm are derived under some regularity assumption of the solution.