Mathematical Model, Numerical Simulation and Convergence Analysis of a Semiconductor Device Problem with Heat and Magnetic Influences
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Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Finite difference methods for boundary value problems involving PDEs (65N06) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Statistical mechanics of semiconductors (82D37)
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- scientific article; zbMATH DE number 123329 (Why is no real title available?)
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- A time-discretization procedure for a mixed finite element approximation of miscible displacement in porous media
- Analysis on block-centered finite differences of numerical simulation of semiconductor device detector
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- Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence
- Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I
- Lineare Spline-Funktionen und die Methoden von Ritz für elliptische Randwertprobleme
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- Mixed Covolume Methods on Rectangular Grids For Elliptic Problems
- Mixed Finite Elements for Elliptic Problems with Tensor Coefficients as Cell-Centered Finite Differences
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- On Convergence of Block-Centered Finite Differences for Elliptic Problems
- On the finite volume element method
- The approximation of the pressure by a mixed method in the simulation of miscible displacement
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