Modified upwind finite volume scheme for semiconductor device

MaRDI QIDQ5318465zbMATH OpenFDO

Authors Qing Yang

Publication date 22 July 2009

zbMATH Keywords

error estimatesfinite volume methodinitial boundary value problemsemiconductor deviceupwind scheme

Mathematics Subject Classification ID

Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Error bounds for initial value and initial-boundary value problems involving PDEs (65M15) Applications to the sciences (65Z05)

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(13)

• A block-centered upwind approximation of the semiconductor device problem on a dynamically changing mesh
• Two-grid method for semiconductor device problem by mixed finite element method and characteristics finite element method
• Upwind finite volume element methods for one-dimensional semiconductor device
• Numerical method of mixed finite volume-modified upwind fractional step difference for three-dimensional semiconductor device transient behavior problems
• An approximation of semiconductor device of heat conduction by mixed finite element method and characteristics-mixed finite element method
• An approximation of semiconductor device by mixed finite element method and characteristics-mixed finite element method
• Mixed covolume-upwind finite volume methods for semiconductor device
• scientific article; zbMATH DE number 2142551 (Why is no real title available?)
• A kind of upwind finite volume element method for the transient behavior of a semiconductor device with heat conduction
• Modification of upwind finite difference fractional step methods by the transient state of the semiconductor device
• Upwind finite volume scheme for semiconductor device in three dimensions
• Stabilizer-free weak Galerkin method and its optimal L^2 error estimates for the time-dependent Poisson-Nernst-Planck problem
• A finite volume element scheme modified with second-order upwind fractional step of three-dimensional semiconductor device transient behavior and its convergence analysis

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