Heat generation in silicon nanometric semiconductor devices

DOI10.1108/COMPEL-11-2012-0327MaRDI QIDQ2970720zbMATHOpenAlexFDO

Authors O. Muscato, Wolfgang Wagner, V. Di Stefano

Publication date 30 March 2017

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/compel-11-2012-0327

zbMATH Keywords

Monte Carlo simulationsemiconductor devicesheating phenomenon

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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Cites work

• 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods
• A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation
• An energy transport model describing heat generation and conduction in silicon semiconductors
• Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
• Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations
• Heat generation in silicon nanometric semiconductor devices
• Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors
• Monte Carlo evaluation of the transport coefficients in a n⁺ – n – n⁺ silicon diode
• Numerical study of the systematic error in Monte Carlo schemes for semiconductors
• Properties of the steady state distribution of electrons in semiconductors
• Seebeck effect in silicon semiconductors
• Time step truncation in direct simulation Monte Carlo for semiconductors

Cited in

(6)

• Heat generation in silicon nanometric semiconductor devices
• Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires
• Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations
• Criteria of local thermal equilibrium for silicon semiconductors
• Heating Dispersal for Self-Healing NAND Flash Memory
• Analysis of self-heating effects in sub-micron silicon devices with electrothermal Monte Carlo simulations

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