Seebeck effect in silicon semiconductors
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Publication:1928095
DOI10.1007/S10440-012-9739-6zbMATH Open1254.82043OpenAlexW2001921055MaRDI QIDQ1928095FDOQ1928095
Authors: V. Di Stefano, O. Muscato
Publication date: 2 January 2013
Published in: Acta Applicandae Mathematicae (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/s10440-012-9739-6
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Cites Work
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- Extended irreversible thermodynamics
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- Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations
- Nine-moment phonon hydrodynamics based on the maximum-entropy closure: one-dimensional flow
- Non parabolic band transport in semiconductors: closure of the moment equations
- The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
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- Extended hydrodynamic model for the coupled electron-phonon system in silicon semiconductors
Cited In (10)
- An Energy Transport Model Describing Electro-Thermal Transport in Silicon Carbide Semiconductors
- Thermoelectric effects in silicon quantum wires
- Electron transport in silicon nanowires having different cross-sections
- Heat generation in silicon nanometric semiconductor devices
- Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire
- A two-temperature model for thermoelectric effects and its consequences in practical applications
- A benchmark study of the signed-particle Monte Carlo algorithm for the Wigner equation
- A hierarchy of hydrodynamic models for silicon carbide semiconductors
- Electrothermal transport in silicon carbide semiconductors via a hydrodynamic model
- Extended hydrodynamic model for the coupled electron-phonon system in silicon semiconductors
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