Comparison of two-valley hydrodynamic model in bulk SiC and ZnO materials

DOI10.1142/S0217984909020916MaRDI QIDQ3401801zbMATH OpenOpenAlexFDO

Authors H. Arabshahi, Rezaee Rokn-Abadi, S. Golafroz

Publication date 1 February 2010

Published in Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1142/s0217984909020916

zbMATH Keywords

drift-diffusionhydrodynamicmulti-valleyoptoelectronics

Mathematics Subject Classification ID

Hypersonic flows (76K05) Motion of charged particles (78A35) Statistical mechanics of semiconductors (82D37)

Recommendations

• Electrothermal transport in silicon carbide semiconductors via a hydrodynamic model
• A hydrodynamic model for covalent semiconductors with applications to GaN and SiC
• Hydrodynamical modeling of charge carrier transport in semiconductors
• A hierarchy of hydrodynamic models for silicon carbide semiconductors
• Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors

Cites work

• On the FACR(l) algorithm for the discrete Poisson equation

This page was built for publication: Comparison of two-valley hydrodynamic model in bulk SiC and ZnO materials

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3401801)