A hydrodynamic model for covalent semiconductors with applications to GaN and SiC
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Publication:1928085
DOI10.1007/S10440-012-9747-6zbMATH Open1254.82041OpenAlexW1971814109MaRDI QIDQ1928085FDOQ1928085
Authors: Giuseppe Alì, Giovanni Mascali, Vittorio Romano, Rosa Claudia Torcasio 
Publication date: 2 January 2013
Published in: Acta Applicandae Mathematicae (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/s10440-012-9747-6
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Cites Work
- Exact Maximum Entropy Closure of the Hydrodynamical Model for Si Semiconductors: The 8-Moment Case
- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle
- The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
- Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle
- Title not available (Why is that?)
Cited In (16)
- Monte Carlo Analysis of Thermal Effects in Monolayer Graphene
- A Monte Carlo Model of Piezoelectric Scattering in GaN
- Charge transport in graphene including thermal effects
- A hydrodynamic model for silicon semiconductors including crystal heating
- Simulation of bipolar charge transport in graphene by using a discontinuous Galerkin method
- Hydrodynamical model for charge transport in graphene
- Extended hydrodynamical models for plasmas
- Quantum corrected hydrodynamic models for charge transport in graphene
- A new formula for thermal conductivity based on a hierarchy of hydrodynamical models
- Comparison of two-valley hydrodynamic model in bulk SiC and ZnO materials
- Assessment of the Constant Phonon Relaxation Time Approximation in Electron–Phonon Coupling in Graphene
- Kinetic and hydrodynamic models for multi-band quantum transport in crystals
- Charge Transport and Hot-Phonon Activation in Graphene
- Hydrodynamic models with quantum corrections
- Electrothermal transport in silicon carbide semiconductors via a hydrodynamic model
- An improved 2D-3D model for charge transport based on the maximum entropy principle
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