A hydrodynamic model for covalent semiconductors with applications to GaN and SiC

DOI10.1007/s10440-012-9747-6zbMath1254.82041OpenAlexW1971814109MaRDI QIDQ1928085

Vittorio Romano, Giuseppe Alì, Rosa Claudia Torcasio, Giovanni Mascali

Publication date: 2 January 2013

Published in: Acta Applicandae Mathematicae (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s10440-012-9747-6

zbMATH Keywords

maximum entropy principlehydrodynamical modelscompound semiconductors

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Turbulence (76F99)

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Cites Work

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• Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle
• The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
• Non parabolic band transport in semiconductors: closure of the moment equations
• Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
• Exact Maximum Entropy Closure of the Hydrodynamical Model for Si Semiconductors: The 8-Moment Case
• Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle

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