A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation

DOI10.1017/S0956792514000011zbMath1307.78006OpenAlexW2329832822MaRDI QIDQ2878027

Vittorio Romano, Rosa Claudia Torcasio, Giuseppe Alì, Giovanni Mascali

Publication date: 28 August 2014

Published in: European Journal of Applied Mathematics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1017/s0956792514000011

zbMATH Keywords

compound semiconductorsmaximum entropy principle, energy dispersion relation

Mathematics Subject Classification ID

Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Statistical mechanics of semiconductors (82D37) Motion of charged particles (78A35) Boltzmann equations (35Q20)

Related Items (5)

A new formula for thermal conductivity based on a hierarchy of hydrodynamical models ⋮ Extended hydrodynamical models for plasmas ⋮ A hydrodynamic model for silicon semiconductors including crystal heating ⋮ Boltzmann's six-moment one-dimensional nonlinear system equations with the Maxwell-Auzhan boundary conditions ⋮ Existence and uniqueness for a two-temperature energy-transport model for semiconductors

Cites Work

• A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
• Maximum entropy principle in relativistic radiation hydrodynamics. II: Compton and double Compton scattering
• The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
• Non parabolic band transport in semiconductors: closure of the moment equations
• Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
• Information Theory and Statistical Mechanics
• Exact Maximum Entropy Closure of the Hydrodynamical Model for Si Semiconductors: The 8-Moment Case
• Maximisation of the entropy in non-equilibrium

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