The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
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Publication:1591775
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Cites work
- scientific article; zbMATH DE number 1619362 (Why is no real title available?)
- scientific article; zbMATH DE number 164902 (Why is no real title available?)
- A $k$-Sample Model in Order Statistics
- Extended thermodynamics tested beyond the linear regime: The case of electron transport in silicon semiconductors
- Field equations for charge conducting fluids in electromagnetic fields
- Hydrodynamic Modeling of an Ultra-Thin Base Silicon Bipolar Transistor
- Moment closure hierarchies for kinetic theories.
- Reciprocal Relations in Irreversible Processes. I.
- Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors
Cited in
(12)- A hydrodynamical model for holes in silicon semiconductors
- A three-fluid approach in bipolar semiconductors with generation-recombination: constitutive laws and Onsager symmetry
- A hydrodynamic model for covalent semiconductors with applications to GaN and SiC
- Seebeck effect in silicon semiconductors
- A complete multifluid model for bipolar semiconductors, with interacting carriers, phonons, and photons
- A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
- A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation
- Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
- Nonlinear nonviscous hydrodynamical models for charge transport in the framework of extended thermodynamic methods
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
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