The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
From MaRDI portal
Publication:1591775
DOI10.1016/S0378-4371(00)00307-1zbMATH Open0971.82522MaRDI QIDQ1591775FDOQ1591775
Publication date: 9 January 2001
Published in: Physica A (Search for Journal in Brave)
Irreversible thermodynamics, including Onsager-Machlup theory (82C35) Statistical mechanics of semiconductors (82D37)
Cites Work
- A $k$-Sample Model in Order Statistics
- Moment closure hierarchies for kinetic theories.
- Reciprocal Relations in Irreversible Processes. I.
- Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors
- Title not available (Why is that?)
- Title not available (Why is that?)
- Field equations for charge conducting fluids in electromagnetic fields
- Extended thermodynamics tested beyond the linear regime: The case of electron transport in silicon semiconductors
- Hydrodynamic Modeling of an Ultra-Thin Base Silicon Bipolar Transistor
Cited In (12)
- Nonlinear nonviscous hydrodynamical models for charge transport in the framework of extended thermodynamic methods
- A three-fluid approach in bipolar semiconductors with generation-recombination: constitutive laws and Onsager symmetry
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle
- A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
- A hydrodynamical model for holes in silicon semiconductors
- Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
- A hydrodynamic model for covalent semiconductors with applications to GaN and SiC
- Seebeck effect in silicon semiconductors
- A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation
- A complete multifluid model for bipolar semiconductors, with interacting carriers, phonons, and photons
Recommendations
- A thermodynamic framework for hydrodynamical models of carrier transport in semiconductors π π
- Extended Hydrodynamical Model of Carrier Transport in Semiconductors π π
- Maximum entropy principle for hydrodynamic analysis of the fluctuations of moments for the hot carriers in semiconductors π π
- Title not available (Why is that?) π π
- Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors π π
This page was built for publication: The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q1591775)