Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
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Publication:1939398
DOI10.1007/s00161-011-0217-6zbMath1263.82061MaRDI QIDQ1939398
Vito Dario Camiola, Giovanni Mascali, Vittorio Romano
Publication date: 4 March 2013
Published in: Continuum Mechanics and Thermodynamics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/s00161-011-0217-6
65M06: Finite difference methods for initial value and initial-boundary value problems involving PDEs
82D37: Statistical mechanics of semiconductors
82C70: Transport processes in time-dependent statistical mechanics
35Q82: PDEs in connection with statistical mechanics
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