A new formula for thermal conductivity based on a hierarchy of hydrodynamical models
DOI10.1007/S10955-016-1509-9zbMATH Open1342.35208OpenAlexW2339253787MaRDI QIDQ301758FDOQ301758
Authors: Giovanni Mascali 
Publication date: 1 July 2016
Published in: Journal of Statistical Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/s10955-016-1509-9
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Boltzmann equations (35Q20) Lattice systems (Ising, dimer, Potts, etc.) and systems on graphs arising in equilibrium statistical mechanics (82B20) PDEs in connection with classical thermodynamics and heat transfer (35Q79) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37)
Cites Work
- Information Theory and Statistical Mechanics
- Moment closure hierarchies for kinetic theories.
- Title not available (Why is that?)
- Heat waves
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
- The BGK-model with velocity-dependent collision frequency
- Maximum entropy principle in relativistic radiation hydrodynamics. II: Compton and double Compton scattering
- Burnett's equations from a \((13+9N)\)-field theory
- A hydrodynamic model for covalent semiconductors with applications to GaN and SiC
- A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation
- Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors
- Hydrodynamic equations for electrons in graphene obtained from the maximum entropy principle
- Title not available (Why is that?)
- Model for Lattice Thermal Conductivity at Low Temperatures
- A hydrodynamic model for silicon semiconductors including crystal heating
- Derivation of 13 Moment Equations for Rarefied Gas Flow to Second Order Accuracy for Arbitrary Interaction Potentials
- An energy transport model describing heat generation and conduction in silicon semiconductors
- Electron-phonon hydrodynamical model for semiconductors
Cited In (11)
- An Energy Transport Model Describing Electro-Thermal Transport in Silicon Carbide Semiconductors
- A full coupled drift-diffusion-Poisson simulation of a GFET
- Charge transport in graphene including thermal effects
- Simulation of bipolar charge transport in graphene by using a discontinuous Galerkin method
- Mesoscopic hydro-thermodynamics of phonons in semiconductors: heat transport in III-nitrides
- A new approach to modelling the effective thermal conductivity of heterogeneous materials
- A new lattice thermal conductivity model of a thin-film semiconductor
- Quantum corrected hydrodynamic models for charge transport in graphene
- A hierarchy of macroscopic models for phonon transport in graphene
- A benchmark study of the signed-particle Monte Carlo algorithm for the Wigner equation
- A hierarchy of hydrodynamic models for silicon carbide semiconductors
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