A new formula for thermal conductivity based on a hierarchy of hydrodynamical models

DOI10.1007/s10955-016-1509-9zbMath1342.35208OpenAlexW2339253787MaRDI QIDQ301758

Giovanni Mascali

Publication date: 1 July 2016

Published in: Journal of Statistical Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s10955-016-1509-9

zbMATH Keywords

maximum entropy principlesemiconductorshydrodynamical modelslattice conductivity

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Lattice systems (Ising, dimer, Potts, etc.) and systems on graphs arising in equilibrium statistical mechanics (82B20) Transport processes in time-dependent statistical mechanics (82C70) PDEs in connection with classical thermodynamics and heat transfer (35Q79) Boltzmann equations (35Q20)

Related Items (8)

A hierarchy of macroscopic models for phonon transport in graphene ⋮ An Energy Transport Model Describing Electro-Thermal Transport in Silicon Carbide Semiconductors ⋮ Charge Transport in Graphene including Thermal Effects ⋮ A benchmark study of the signed-particle Monte Carlo algorithm for the Wigner equation ⋮ A hierarchy of hydrodynamic models for silicon carbide semiconductors ⋮ A full coupled drift-diffusion-Poisson simulation of a GFET ⋮ Simulation of Bipolar Charge Transport in Graphene by Using a Discontinuous Galerkin Method ⋮ Quantum corrected hydrodynamic models for charge transport in graphene

Cites Work

• Unnamed Item
• Unnamed Item
• An energy transport model describing heat generation and conduction in silicon semiconductors
• Electron-phonon hydrodynamical model for semiconductors
• The BGK-model with velocity-dependent collision frequency
• Maximum entropy principle in relativistic radiation hydrodynamics. II: Compton and double Compton scattering
• Moment closure hierarchies for kinetic theories.
• Burnett's equations from a \((13+9N)\)-field theory
• A hydrodynamic model for covalent semiconductors with applications to GaN and SiC
• A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle
• Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
• A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation
• Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors
• Hydrodynamic equations for electrons in graphene obtained from the maximum entropy principle
• Model for Lattice Thermal Conductivity at Low Temperatures
• Information Theory and Statistical Mechanics
• A hydrodynamic model for silicon semiconductors including crystal heating
• Derivation of 13 Moment Equations for Rarefied Gas Flow to Second Order Accuracy for Arbitrary Interaction Potentials
• Heat waves

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