Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors
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Publication:2575044
DOI10.1016/j.jmaa.2005.03.063zbMath1079.35020OpenAlexW2092223807MaRDI QIDQ2575044
Publication date: 5 December 2005
Published in: Journal of Mathematical Analysis and Applications (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jmaa.2005.03.063
entropy inequalityinitial boundary value problemcompactness argumentenergy relaxationdrift diffusion
Asymptotic behavior of solutions to PDEs (35B40) PDEs in connection with optics and electromagnetic theory (35Q60) Statistical mechanics of semiconductors (82D37)
Related Items (11)
Energy transport in semiconductor devices ⋮ Study on a cross diffusion parabolic system ⋮ A simplified quantum energy-transport model for semiconductors ⋮ Numerical Schemes for Semiconductors Energy-Transport Models ⋮ Lyapunov functionals, weak sequential stability, and uniqueness analysis for energy-transport systems ⋮ A simplified stationary energy-transport model with temperature-dependent conductivity ⋮ Existence and uniqueness for a two-temperature energy-transport model for semiconductors ⋮ Asymptotic behavior of strong solutions of a simplified energy-transport model with general conductivity ⋮ Analysis of numerical schemes for semiconductor energy-transport models ⋮ Numerical analysis of DDFV schemes for semiconductors energy-transport models ⋮ A solution to the simplified multi-dimensional energy-transport model with a general conductivity for semiconductors
Cites Work
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- An energy-transport model for semiconductors derived from the Boltzmann equation.
- Quasi-hydrodynamic semiconductor equations
- Strong solution to a kind of cross diffusion parabolic system
- The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors
- On a hierarchy of macroscopic models for semiconductors
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