Numerical Schemes for Semiconductors Energy-Transport Models
DOI10.1007/978-3-030-43651-3_5zbMATH Open1454.65072OpenAlexW3033638217MaRDI QIDQ5117426FDOQ5117426
Hélène Mathis, C. Chainais-Hillairet, M. Bessemoulin-Chatard
Publication date: 25 August 2020
Published in: Finite Volumes for Complex Applications IX - Methods, Theoretical Aspects, Examples (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/978-3-030-43651-3_5
Initial-boundary value problems for second-order parabolic equations (35K20) Finite volume methods for initial value and initial-boundary value problems involving PDEs (65M08) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Motion of charged particles (78A35) Diffusive and convective heat and mass transfer, heat flow (80A19) Statistical mechanics of semiconductors (82D37)
Cites Work
- Quasi-hydrodynamic semiconductor equations
- Finite volume methods
- A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
- Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
- Numerical discretization of energy-transport model for semiconductors using high-order compact schemes
- Regularity and uniqueness of solutions to a parabolic system in nonequilibrium thermodynamics
- Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors
- Title not available (Why is that?)
- The solution ofLyumkis energy transport model in semiconductor science
- EXISTENCE OF STATIONARY SOLUTIONS TO AN ENERGY DRIFT-DIFFUSION MODEL FOR SEMICONDUCTOR DEVICES
- Existence analysis for a simplified transient energy-transport model for semiconductors
- Discretization of coupled heat and electrical diffusion problems by finite-element and finite-volume methods
- Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient
- Discrete duality finite volume schemes for two‐dimensional drift‐diffusion and energy‐transport models
- A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors
- An Adaptive Mixed Scheme for Energy-Transport Simulations of Field-Effect Transistors
- A combined finite volume -- finite element scheme for a low-Mach system involving a Joule term
- Global existence analysis for degenerate energy-transport models for semiconductors
Cited In (12)
- Title not available (Why is that?)
- An Adaptive Mixed Scheme for Energy-Transport Simulations of Field-Effect Transistors
- Energy transport in semiconductor devices
- Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
- Numerical analysis of DDFV schemes for semiconductors energy-transport models
- The numerical simulation of the p-n barrier capacity in semiconductor device structures
- A convergent finite volume scheme for dissipation driven models with volume filling constraint
- Title not available (Why is that?)
- Numerical Simulation of Charge Transport in Semiconductor Devices Using Mixed Finite Elements
- Title not available (Why is that?)
- Numerical discretization of energy-transport model for semiconductors using high-order compact schemes
- Analysis of numerical schemes for semiconductor energy-transport models
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