Numerical discretization of energy-transport model for semiconductors using high-order compact schemes
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Publication:1614112
DOI10.1016/S0893-9659(02)00033-2zbMath1001.82116MaRDI QIDQ1614112
Publication date: 3 September 2002
Published in: Applied Mathematics Letters (Search for Journal in Brave)
82D37: Statistical mechanics of semiconductors
65N06: Finite difference methods for boundary value problems involving PDEs
Related Items
Numerical Schemes for Semiconductors Energy-Transport Models, 2D numerical simulation of the MEP energy-transport model with a finite difference scheme, Analysis of numerical schemes for semiconductor energy-transport models, Numerical analysis of DDFV schemes for semiconductors energy-transport models, Energy transport in semiconductor devices, Discrete duality finite volume schemes for two‐dimensional drift‐diffusion and energy‐transport models
Cites Work
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- Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors