Numerical analysis of DDFV schemes for semiconductors energy-transport models
DOI10.1007/S40314-021-01709-XzbMATH Open1499.65454OpenAlexW3122256287MaRDI QIDQ2064992FDOQ2064992
Authors: M. Bessemoulin-Chatard, Giulia Lissoni, Hélène Mathis 
Publication date: 6 January 2022
Published in: Computational and Applied Mathematics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/s40314-021-01709-x
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Initial-boundary value problems for second-order parabolic equations (35K20) Boltzmann equations (35Q20) Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Finite volume methods for initial value and initial-boundary value problems involving PDEs (65M08) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Finite volume methods for boundary value problems involving PDEs (65N08) Statistical mechanics of semiconductors (82D37)
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Cited In (5)
- Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
- A convergent finite volume scheme for dissipation driven models with volume filling constraint
- Discrete duality finite volume schemes for two‐dimensional drift‐diffusion and energy‐transport models
- Numerical discretization of energy-transport model for semiconductors using high-order compact schemes
- Analysis of numerical schemes for semiconductor energy-transport models
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