The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors

From MaRDI portal
Publication:4497957

DOI10.1090/qam/1686190zbMath1034.82067OpenAlexW2274776367WikidataQ57777041 ScholiaQ57777041MaRDI QIDQ4497957

Roberto Natalini, Ingenuin Gasser

Publication date: 24 August 2000

Published in: Quarterly of Applied Mathematics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1090/qam/1686190




Related Items

Zero relaxation time limits to a hydrodynamic model of two carrier types for semiconductorsA REVIEW ON THE QUANTUM DRIFT DIFFUSION MODELA review of hydrodynamical models for semiconductors: Asymptotic behaviorASYMPTOTIC BEHAVIOR OF GLOBAL SMOOTH SOLUTIONS TO THE FULL 1D HYDRODYNAMIC MODEL FOR SEMICONDUCTORSRelaxation-time limits of non-isentropic hydrodynamic models for semiconductorsStationary solutions for a multi-dimensional nonisentropic hydrodynamic model for semiconductorsUniformly time-independent \(L^\infty\) estimate for a one-dimensional hydrodynamic model of semiconductorsGlobal solutions and relaxation limit to the Cauchy problem of a hydrodynamic model for semiconductorsGlobal solutions to nonisentropic hydrodynamic models for two-carrier plasmasLarge time behavior of solutions of the bipolar hydrodynamical model for semiconductors.Global existence of classical solutions of full Euler-Maxwell equationsInitial layer and relaxation limit of non-isentropic compressible Euler equations with dampingDiffusive relaxation limits of compressible Euler-Maxwell equationsRelaxation-time limit of the multidimensional bipolar hydrodynamic model in Besov spaceEnergy-transport and drift-diffusion limits of nonisentropic Euler-Poisson equationsStability of steady states of the compressible Euler-Poisson system in \(\mathbb R^3\)A phase analysis of transonic solutions for the hydrodynamic semiconductor modelRelaxation-time limit of the three-dimensional hydrodynamic model with boundary effectsENERGY-TRANSPORT LIMIT OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTORSThe diffusive relaxation limit of non-isentropic Euler-Maxwell equations for plasmasAsymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductorsRelaxation limit and initial layer analysis of a bipolar hydrodynamic model for semiconductorsNonlinear stability of smooth solutions of the energy-transport model for semiconductorsAsymptotic convergence to planar stationary waves for multi-dimensional unipolar hydrodynamic model of semiconductorsThe well-posedness theory for Euler–Poisson fluids with non-zero heat conductionRelaxation-time limit in the multi-dimensional bipolar nonisentropic Euler-Poisson systemsDiscrete duality finite volume schemes for two‐dimensional drift‐diffusion and energy‐transport modelsLarge time behavior of entropy solutions to one-dimensional unipolar hydrodynamic model for semiconductor devicesLarge time behaviors of solutions to the unipolar hydrodynamic model of semiconductors with physical boundary effectAsymptotic stability of solutions to the nonisentropic hydrodynamic model for semiconductorsAnalysis of numerical schemes for semiconductor energy-transport modelsFrom a multidimensional quantum hydrodynamic model to the classical drift-diffusion equationLarge time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductorsA relaxation scheme for the hydrodynamic equations for semiconductorsLarge-time behavior of the full compressible Euler-Poisson system without the temperature damping