Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors

DOI10.1006/jdeq.2000.3825zbMath0986.35110OpenAlexW2068971618MaRDI QIDQ5931938

Ling Hsiao, Tong Yang

Publication date: 6 June 2002

Published in: Journal of Differential Equations (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1006/jdeq.2000.3825

zbMATH Keywords

drift-diffusion modelhydrodynamic semiconductor equationslarge-time asymptotics

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) PDEs in connection with optics and electromagnetic theory (35Q60) Statistical mechanics of semiconductors (82D37)

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Cites Work

• Convergence of the Godunov scheme for a simplified one-dimensional hydrodynamic model for semiconductor devices
• The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations
• An energy-transport model for semiconductors derived from the Boltzmann equation.
• On a one-dimensional steady-state hydrodynamic model for semiconductors
• Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation
• The bipolar hydrodynamic model for semiconductors and the drift-diffusion equations
• The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors
• Weak solutions to a hydrodynamic model for semiconductors: the Cauchy problem
• THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
• ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES
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