ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES

DOI10.1142/S0218202502001684zbMath1174.82351MaRDI QIDQ4798966

Kai-Jun Zhang, Youchun Qiu

Publication date: 16 March 2003

Published in: Mathematical Models and Methods in Applied Sciences (Search for Journal in Brave)

zbMATH Keywords

compensated compactnessGodunov schemerelaxation limitGlobal weak solutionsemiconductor hydrodynamic modeltrace of weak solution

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) PDEs in connection with fluid mechanics (35Q35) Statistical mechanics of semiconductors (82D37) Ionized gas flow in electromagnetic fields; plasmic flow (76X05)

Related Items

Quasi-Neutral Limit to Steady-State Hydrodynamic Model of Semiconductors with Degenerate Boundary, Steady Euler-Poisson systems: a differential/integral equation formulation with general constitutive relations, On the steady state relativistic Euler-Poisson equations, Stability of steady states of the compressible Euler-Poisson system in \(\mathbb R^3\), Analysis of non-isentropic compressible Euler equations with relaxation, Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors, On Well-Posedness of a Boltzmann-Like Semiconductor Model, Initial boundary value problem for compressible Euler equations with relaxation, On the isothermal compressible Euler equations with frictional damping

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