Quasi-Neutral Limit to Steady-State Hydrodynamic Model of Semiconductors with Degenerate Boundary
DOI10.1137/22m1504135zbMath1519.35319OpenAlexW4384154263MaRDI QIDQ6172786
Ming Mei, Dongfang Li, Guojing Zhang, Liang Chen
Publication date: 20 July 2023
Published in: SIAM Journal on Mathematical Analysis (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1137/22m1504135
boundary layersquasi-neutral limithydrodynamic model of semiconductorsdegenerate boundarysubsonic-sonic solutions
Smoothness and regularity of solutions to PDEs (35B65) Asymptotic behavior of solutions to PDEs (35B40) PDEs in connection with fluid mechanics (35Q35) Transonic flows (76H05) General aerodynamics and subsonic flows (76G25) First-order nonlinear hyperbolic equations (35L60) Statistical mechanics of semiconductors (82D37) Self-similar solutions to PDEs (35C06) PDEs in connection with semiconductor devices (35Q81)
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Cites Work
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- Vanishing dielectric constant regime for the Navier Stokes Maxwell equations
- Initial layers and zero-relaxation limits of Euler-Maxwell equations
- Semilinear elliptic boundary value problems with small parameters
- Steady hydrodynamic model of semiconductors with sonic boundary and transonic doping profile
- Stability of semiconductor states with insulating and contact boundary conditions
- The zero-electron-mass limit in the hydrodynamic model for plasmas
- Convergence of the Godunov scheme for a simplified one-dimensional hydrodynamic model for semiconductor devices
- A steady state potential flow model for semiconductors
- Asymptotic limits of one-dimensional hydrodynamic models for plasmas and semiconductors
- Zero-mass-electrons limits in hydrodynamic models for plasmas
- On a one-dimensional steady-state hydrodynamic model for semiconductors
- A hierachy of hydrodynamic models for plasmas. Zero-electron-mass limits in the drift-diffusion equations
- Radial solutions of hydrodynamic model of semiconductors with sonic boundary
- Newtonian limit for the relativistic Euler-Poisson equations with vacuum
- Free boundary value problem for damped Euler equations and related models with vacuum
- Stability of steady-state for 3-D hydrodynamic model of unipolar semiconductor with ohmic contact boundary in hollow ball
- Asymptotic stability of a stationary solution to a hydrodynamic model of semiconductors
- Example of supersonic solutions to a steady state Euler-Poisson system
- QUASI-NEUTRAL LIMIT OF THE MULTIDIMENSIONAL DRIFT-DIFFUSION MODELS FOR SEMICONDUCTORS
- Asymptotic Convergence to Stationary Waves for Unipolar Hydrodynamic Model of Semiconductors
- Relaxation Limit and Global Existence of Smooth Solutions of Compressible Euler–Maxwell Equations
- A PHASE PLANE ANALYSIS OF TRANSONIC SOLUTIONS FOR THE HYDRODYNAMIC SEMICONDUCTOR MODEL
- A hierarchy of hydrodynamic models for plasmas zero-relaxation-time limits
- Relaxation of the isothermal Euler-Poisson system to the drift-diffusion equations
- Quasineutral limit of an euler-poisson system arising from plasma physics
- Asymptotic behaviour of solutions of the hydrodynamic model of semiconductors
- Steady Hydrodynamic Model of Semiconductors with Sonic Boundary: (I) Subsonic Doping Profile
- Steady Hydrodynamic Model of Semiconductors with Sonic Boundary: (II) Supersonic Doping Profile
- Weak solutions to a hydrodynamic model for semiconductors: the Cauchy problem
- ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES
- Boundary layers and quasi-neutral limit in steady state Euler–Poisson equations for potential flows
- Transonic Steady-States of Euler--Poisson Equations for Semiconductor Models with Sonic Boundary
- The Combined Incompressible Quasineutral Limit of the Stochastic Navier--Stokes--Poisson System
- Non-relativistic limit analysis of the Chandrasekhar–Thorne relativistic Euler equations with physical vacuum
- Quasi-neutral limit for Euler-Poisson system
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