Stability of steady-state for 3-D hydrodynamic model of unipolar semiconductor with ohmic contact boundary in hollow ball
DOI10.1016/J.JDE.2020.12.027zbMATH Open1456.82936OpenAlexW3119794568MaRDI QIDQ2223593FDOQ2223593
Authors: Ming Mei, Xiaochun Wu, Yongqian Zhang 
Publication date: 29 January 2021
Published in: Journal of Differential Equations (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jde.2020.12.027
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Cites Work
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- Asymptotic convergence to stationary waves for unipolar hydrodynamic model of semiconductors
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- Asymptotic behaviour of solutions of the hydrodynamic model of semiconductors
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- Steady-state solutions of a one-dimensional hydrodynamic model for semiconductors
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- A viscous approximation for a 2-D steady semiconductor or transonic gas dynamic flow: Existence theorem for potential flow
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- An Approximate Newton Method for the Solution of the Basic Semiconductor Device Equations
Cited In (10)
- 3D full hydrodynamic model for semiconductor optoelectronic devices: stability of thermal equilibrium states
- Stability of semiconductor states with insulating and contact boundary conditions
- Structural stability of subsonic steady states to the hydrodynamic model for semiconductors with sonic boundary
- Nonlinear structural stability and linear dynamic instability of transonic steady-states to hydrodynamic model for semiconductors
- Quasi-Neutral Limit to Steady-State Hydrodynamic Model of Semiconductors with Degenerate Boundary
- Subsonic steady-states for bipolar hydrodynamic model for semiconductors
- Local smooth solutions to the Euler-Poisson equations for semiconductor in vacuum
- The uniqueness of steady sonic-subsonic solution to hydrodynamic model for semiconductors
- Structural stability of subsonic steady-states to the bipolar Euler-Poisson equations with degenerate boundary
- The subsonic or sonic-subsonic solution of the electric potential driven problem to the HD model for semiconductors
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