THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
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Publication:4798842
DOI10.1142/S0218202500000653zbMath1174.82350MaRDI QIDQ4798842
Publication date: 16 March 2003
Published in: Mathematical Models and Methods in Applied Sciences (Search for Journal in Brave)
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A review of hydrodynamical models for semiconductors: Asymptotic behavior, Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors, On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors, The asymptotic behavior and the quasineutral limit for the bipolar Euler-Poisson system with boundary effects and a vacuum, Stability of steady states of the compressible Euler-Poisson system in \(\mathbb R^3\), Asymptotic convergence to planar stationary waves for multi-dimensional unipolar hydrodynamic model of semiconductors, Global existence and asymptotic behavior of solutions to the nonisentropic bipolar hydrodynamic models, Relaxation-time limit of the multidimensional bipolar hydrodynamic model in Besov space, Global existence and asymptotic behavior of the solutions to the three-dimensional bipolar Euler-Poisson systems, On the isothermal compressible Euler equations with frictional damping, A note on asymptotic behavior of solutions for the one-dimensional bipolar Euler-Poisson system, Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors., Global smooth solutions to the multi-dimensional hydrodynamic model for two-carrier plasmas, Global smooth solutions to the multidimensional hydrodynamic model for plasmas with insulating boundary conditions, Diffusion relaxation limit of a bipolar hydrodynamic model for semiconductors, Weak solutions of the isothermal bipolar hydrodynamic model for semiconductors with large data, Asymptotic behavior of solutions for the one-dimensional drift-diffusion model in the quarter plane
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