Drift-diffusion models for the simulation of a graphene field effect transistor

DOI10.1186/S13362-022-00120-3zbMATH Open1485.82007OpenAlexW4207071480MaRDI QIDQ2138196FDOQ2138196

Authors: Giovanni Nastasi, Vittorio Romano 

Publication date: 11 May 2022

Published in: Journal of Mathematics in Industry (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1186/s13362-022-00120-3

zbMATH Keywords

graphenedrift-diffusion modelgraphene FET

Mathematics Subject Classification ID

Interface problems; diffusion-limited aggregation in time-dependent statistical mechanics (82C24)

Cites Work

• A full coupled drift-diffusion-Poisson simulation of a GFET
• Title not available (Why is that?)
• A hydrodynamic model for silicon semiconductors including crystal heating
• Derivation of isothermal quantum fluid equations with Fermi-Dirac and Bose-Einstein statistics
• Charge Transport in Graphene including Thermal Effects
• Improved mobility models for charge transport in graphene
• Quantum corrected hydrodynamic models for charge transport in graphene
• Simulation of Bipolar Charge Transport in Graphene by Using a Discontinuous Galerkin Method
• Cross validation of discontinuous Galerkin method and Monte Carlo simulations of charge transport in graphene on substrate

Cited In (3)

• Title not available (Why is that?)
• Emergence of biological transportation networks as a self-regulated process
• Title not available (Why is that?)

Uses Software

• GFET

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