Drift-diffusion models for the simulation of a graphene field effect transistor
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Publication:2138196
Cites work
- A full coupled drift-diffusion-Poisson simulation of a GFET
- A hydrodynamic model for silicon semiconductors including crystal heating
- Charge transport in graphene including thermal effects
- Cross validation of discontinuous Galerkin method and Monte Carlo simulations of charge transport in graphene on substrate
- Derivation of isothermal quantum fluid equations with Fermi-Dirac and Bose-Einstein statistics
- scientific article; zbMATH DE number 3084323 (Why is no real title available?)
- Improved mobility models for charge transport in graphene
- Quantum corrected hydrodynamic models for charge transport in graphene
- Simulation of bipolar charge transport in graphene by using a discontinuous Galerkin method
Cited in
(5)- scientific article; zbMATH DE number 6695160 (Why is no real title available?)
- scientific article; zbMATH DE number 6520743 (Why is no real title available?)
- Emergence of biological transportation networks as a self-regulated process
- A drift-diffusion model for charge transport in GFETs with a proper modeling of the electrostatic potential
- Second order unfitted ghost-FEM for elliptic interface problems with applications to low-dimensional semiconductor devices
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