An asymptotic-preserving scheme for the semiconductor Boltzmann equation toward the energy-transport limit

DOI10.1016/J.JCP.2014.10.050MaRDI QIDQ728812zbMATH OpenOpenAlexFDO

Authors Jingwei Hu, Li Wang

Publication date 20 December 2016

Published in Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL https://arxiv.org/abs/1309.1330

zbMATH Keywords

asymptotic-preserving schemeenergy-transport systemfast spectral methodsemiconductor Boltzmann equation

Mathematics Subject Classification ID

Finite difference methods applied to problems in optics and electromagnetic theory (78M20) Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Composite media; random media in optics and electromagnetic theory (78A48) Statistical mechanics of semiconductors (82D37)

Abstract: We design an asymptotic-preserving scheme for the semiconductor Boltzmann equation which leads to an energy-transport system for electron mass and internal energy as mean free path goes to zero. To overcome the stiffness induced by the convection terms, we adopt an even-odd decomposition to formulate the equation into a diffusive relaxation system. New difficulty arises in the two-scale stiff collision terms, whereas the simple BGK penalization does not work well to drive the solution to the correct limit. We propose a clever variant of it by introducing a threshold on the stiffer collision term such that the evolution of the solution resembles a Hilbert expansion at the continuous level. Formal asymptotic analysis and numerical results are presented to illustrate the efficiency and accuracy of the new scheme.

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Cited in

(12)

• An Admissible Asymptotic-Preserving Numerical Scheme for the Electronic M1 Model in the Diffusive Limit
• On deterministic numerical methods for the quantum Boltzmann-nordheim equation. I. Spectrally accurate approximations, Bose-Einstein condensation, Fermi-Dirac saturation
• Asymptotic Preserving Discontinuous Galerkin Methods for a Linear Boltzmann Semiconductor Model
• Adaptive energy discretization of the semiconductor Boltzmann equation
• Asymptotic preserving schemes for semiconductor Boltzmann equations in the diffusive regime
• Asymptotic preserving schemes for the Wigner-Poisson-BGK equations in the diffusion limit
• Implicit asymptotic preserving schemes for semiconductor Boltzmann equation in the diffusive regime
• A stochastic asymptotic-preserving scheme for the bipolar semiconductor Boltzmann-Poisson system with random inputs and diffusive scalings
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• Asymptotic-preserving numerical schemes for the semiconductor Boltzmann equation efficient in the high field regime
• Moment Methods for the Semiconductor Boltzmann Equation on Bounded Position Domains
• Multiscale schemes for the BGK-Vlasov-Poisson system in the quasi-neutral and fluid limits. stability analysis and first order schemes

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