Asymptotic Preserving Discontinuous Galerkin Methods for a Linear Boltzmann Semiconductor Model

DOI10.1137/22M1485784MaRDI QIDQ6402610zbMATH OpenFDO

Authors Victor DeCaria, Cory D. Hauck, Stefan Schnake

Publication date 20 June 2022

Mathematics Subject Classification ID

Second-order parabolic equations (35K10) Boltzmann equations (35Q20) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Error bounds for initial value and initial-boundary value problems involving PDEs (65M15) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Statistical mechanics of semiconductors (82D37)

Abstract: A key property of the linear Boltzmann semiconductor model is that as the collision frequency tends to infinity, the phase space density $f=f(x,v,t)$ converges to an isotropic function $M(v)ho(x,t)$, called the drift-diffusion limit, where $M$ is a Maxwellian and the physical density $ho$ satisfies a second-order parabolic PDE known as the drift-diffusion equation. Numerical approximations that mirror this property are said to be asymptotic preserving. In this paper we build two discontinuous Galerkin methods to the semiconductor model: one with the standard upwinding flux and the other with a $varepsilon$-scaled Lax-Friedrichs flux, where 1/$varepsilon$ is the scale of the collision frequency. We show that these schemes are uniformly stable in $varepsilon$ and are asymptotic preserving. In particular, we discuss what properties the discrete Maxwellian must satisfy in order for the schemes to converge in $varepsilon$ to an accurate $h$-approximation of the drift diffusion limit. Discrete versions of the drift-diffusion equation and error estimates in several norms with respect to $varepsilon$ and the spacial resolution are also included.

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