Asymptotic Preserving Discontinuous Galerkin Methods for a Linear Boltzmann Semiconductor Model

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Publication:6402610

DOI10.1137/22M1485784arXiv2206.09805MaRDI QIDQ6402610FDOQ6402610


Authors: Victor DeCaria, Cory D. Hauck, Stefan Schnake Edit this on Wikidata


Publication date: 20 June 2022

Abstract: A key property of the linear Boltzmann semiconductor model is that as the collision frequency tends to infinity, the phase space density f=f(x,v,t) converges to an isotropic function M(v)ho(x,t), called the drift-diffusion limit, where M is a Maxwellian and the physical density ho satisfies a second-order parabolic PDE known as the drift-diffusion equation. Numerical approximations that mirror this property are said to be asymptotic preserving. In this paper we build two discontinuous Galerkin methods to the semiconductor model: one with the standard upwinding flux and the other with a varepsilon-scaled Lax-Friedrichs flux, where 1/varepsilon is the scale of the collision frequency. We show that these schemes are uniformly stable in varepsilon and are asymptotic preserving. In particular, we discuss what properties the discrete Maxwellian must satisfy in order for the schemes to converge in varepsilon to an accurate h-approximation of the drift diffusion limit. Discrete versions of the drift-diffusion equation and error estimates in several norms with respect to varepsilon and the spacial resolution are also included.





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