WENO

swMATH12694MaRDI QIDQ24620FDOQ24620

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Described by source

• A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.

Cited In (55)

• Adaptive energy discretization of the semiconductor Boltzmann equation
• Implicit-explicit schemes for BGK kinetic equations
• Title not available (Why is that?)
• Quadrature-based moment methods for kinetic plasma simulations
• Study of Discrete Scattering Operators for Some Linear Kinetic Models
• Parallelization of WENO-Boltzmann schemes for kinetic descriptions of 2D semiconductor devices
• Discontinuous Galerkin deterministic solvers for a Boltzmann-Poisson model of hot electron transport by averaged empirical pseudopotential band structures
• Discrete kernel preserving model for 1D electron-optical phonon scattering
• Filtered hyperbolic moment method for the Vlasov equation
• Simulation of silicon semiconductor devices by means of a direct Boltzmann‐Poisson solver
• Semicontinuous Kinetic Theory of the Relaxation of Electrons in GaAs
• Numerical schemes for solving the non-stationary Boltzmann-Poisson system for two-dimensional semiconductor devices
• Nonoscillatory Interpolation Methods Applied to Vlasov-Based Models
• Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model
• Quantum corrections to the semiclassical hydrodynamical model of semiconductors based on the maximum entropy principle
• 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
• Numerical symmetry-preserving techniques for low-dissipation shock-capturing schemes
• Strong Stability Preserving Two-step Runge–Kutta Methods
• Strong Stability Preserving Integrating Factor Runge--Kutta Methods
• High order strong stability preserving time discretizations
• A brief survey of the discontinuous Galerkin method for the Boltzmann-Poisson equations
• Strongly out-of-equilibrium simulations for electron Boltzmann transport equation using modal discontinuous Galerkin approach
• Positivity-preserving discontinuous Galerkin schemes for linear Vlasov-Boltzmann transport equations
• Semiclassical limit of an inverse problem for the Schrödinger equation
• Fast sparse grid simulations of fifth order WENO scheme for high dimensional hyperbolic PDEs
• A combined multicell‐WENO solver for the Boltzmann‐Poisson system of 1D semiconductor devices
• Variance-reduced Monte Carlo solutions of the Boltzmann equation for low-speed gas flows: A discontinuous Galerkin formulation
• Derivation of a Non-Local Model for Diffusion Asymptotics — Application to Radiative Transfer Problems
• A Finite Volume Method for the Multi Subband Boltzmann Equation with Realistic 2D Scattering in Double Gate MOSFETs
• Galerkin methods for Boltzmann-Poisson transport with reflection conditions on rough boundaries
• A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo
• Multigroup equations to the hot-electron hot-phonon system in III--V compound semiconductors
• Essentially non-oscillatory and weighted essentially non-oscillatory schemes
• A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs
• Deterministic kinetic solvers for charged particle transport in semiconductor devices
• Deterministic and stochastic simulations of electron transport in semiconductors
• Exact Maximum Entropy Closure of the Hydrodynamical Model for Si Semiconductors: The 8-Moment Case
• Analysis and numerical solver for excitatory-inhibitory networks with delay and refractory periods
• High Order Weighted Essentially Nonoscillatory Schemes for Convection Dominated Problems
• Numerical properties of high order discrete velocity solutions to the BGK kinetic equation
• Simulation of shock wave diffraction over \(90^\circ \) sharp corner in gases of arbitrary statistics
• 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods
• A kinetic transport and reaction model and simulator for rarefied gas flow in the transition regime
• A semi-Lagrangian deterministic solver for the semiconductor Boltzmann-Poisson system
• Explicit strong stability preserving multistep Runge–Kutta methods
• A Galerkin method for the simulation of the transient 2-D/2-D and 3-D/3-D linear Boltzmann equation
• On the Cauchy problem for spatially homogeneous semiconductor Boltzmann equations: existence and uniqueness
• Asymptotic-preserving numerical schemes for the semiconductor Boltzmann equation efficient in the high field regime
• Efficient deterministic parallel simulation of 2D semiconductor devices based on WENO-Boltzmann schemes
• Local discontinuous Galerkin methods for moment models in device simulations: Performance assessment and two-dimensional results
• An Asymptotic Preserving Scheme for the Diffusive Limit of Kinetic Systems for Chemotaxis
• High order numerical methods for the space non-homogeneous Boltzmann equation.
• Spectral Solvers to Non-Conservative Transport for Non-Linear Interactive Systems of Boltzmann Type
• On the Modeling and Simulation of Reaction-Transfer Dynamics in Semiconductor-Electrolyte Solar Cells
• A deterministic solution method for the coupled system of transport equations for the electrons and phonons in polar semiconductors

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