A QUALITATIVE ANALYSIS OF THE FUNDAMENTAL SEMICONDUCTOR DEVICE EQUATIONS

DOI10.1108/EB009978zbMATH Open0619.65115OpenAlexW2058724619MaRDI QIDQ3756462FDOQ3756462

Peter Alexander Markowich

Publication date: 1983

Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb009978

zbMATH Keywords

boundary layerselliptic systemsscalingmatched asymptotic expansionsPoisson's equationsingular perturbation theoryfundamental static semiconductor device equationsnormed minimal Debye lengthoxide- semiconductor interfacesSchottky contacts

Mathematics Subject Classification ID

Singular perturbations in context of PDEs (35B25) Partial differential equations of mathematical physics and other areas of application (35Q99) Motion of charged particles (78A35) Applications to the sciences (65Z05)

Cites Work

• Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
• Singularly disturbed systems of the theory of semiconductor devices

Cited In (9)

• Title not available (Why is that?)
• A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations
• A SENSITIVITY ANALYSIS OF THE STEADY STATE SEMICONDUCTOR DEVICE EQUATIONS
• Title not available (Why is that?)
• Title not available (Why is that?)
• Title not available (Why is that?)
• A MASS‐LUMPING SEMIDISCRETIZATION OF THE SEMICONDUCTOR DEVICE EQUATIONS
• An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
• Semiconductor device modelling from the numerical point of view

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