A Singular Perturbation Analysis of the Transient Semiconductor Device Equations

DOI10.1137/0149067zbMATH Open0699.35014OpenAlexW2088799440MaRDI QIDQ3477211FDOQ3477211

Authors: Peter Szmolyan 

Publication date: 1989

Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1137/0149067

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zbMATH Keywords

singular perturbationmatched asymptotic expansionstransient semiconductor

Mathematics Subject Classification ID

Singular perturbations in context of PDEs (35B25) Asymptotic expansions of solutions to PDEs (35C20) Partial differential equations of mathematical physics and other areas of application (35Q99)

Cited In (21)

• Analysis of singular transistor circuits using the orthogonal functions
• Traveling waves in GaAs semiconductors
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• ASYMPTOTIC METHODS FOR TRANSIENT SEMICONDUCTOR DEVICE EQUATIONS
• Uniform Asymptotic Representation of Solutions of the Basic Semiconductor-Device Equations
• Perturbation approach to Ebers-Moll equations for transistor circuit analysis
• A SENSITIVITY ANALYSIS OF THE STEADY STATE SEMICONDUCTOR DEVICE EQUATIONS
• A Bifurcation Analysis of the One-Dimensional Steady-State Semiconductor Device Equations
• A Singular Perturbation Analysis for the Transient Semiconductor Device Equations in One Space Dimension
• A survey of numerical techniques for solving singularly perturbed ordinary differential equations
• Title not available (Why is that?)
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• Analysis of a Singularly Perturbed Traveling Wave Problem
• A system of convection-diffusion equations with small diffusion coefficient arising in semiconductor physics
• Title not available (Why is that?)
• An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
• Initial transients of solutions of the semiconductor device equations
• Stability of the Linearized Transient Semiconductor Device Equations

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