ASYMPTOTIC METHODS FOR TRANSIENT SEMICONDUCTOR DEVICE EQUATIONS

DOI10.1108/eb010053zbMath0704.35006OpenAlexW2056500850MaRDI QIDQ3483645

Peter Szmolyan

Publication date: 1989

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb010053

zbMATH Keywords

asymptotic methodstransient semiconductor

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Singular perturbations in context of PDEs (35B25) Reaction-diffusion equations (35K57)

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Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case ⋮ Initial time layer problem for quantum drift-diffusion model

Cites Work

• Perturbation methods in applied mathematics
• A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations
• On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors
• Time-dependent solutions of a nonlinear system arising in semiconductor theory
• An Asymptotic Analysis of a Transient p-n-Junction Model
• Time-dependent solutions of a nonlinear system arising in semiconductor theory—II. Boundedness and periodicity
• A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device
• Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors