ASYMPTOTIC METHODS FOR TRANSIENT SEMICONDUCTOR DEVICE EQUATIONS
DOI10.1108/EB010053zbMATH Open0704.35006OpenAlexW2056500850MaRDI QIDQ3483645FDOQ3483645
Authors: Peter Szmolyan 
Publication date: 1989
Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/eb010053
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Cites Work
- Perturbation methods in applied mathematics
- On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors
- Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
- Time-dependent solutions of a nonlinear system arising in semiconductor theory
- Time-dependent solutions of a nonlinear system arising in semiconductor theory—II. Boundedness and periodicity
- A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations
- A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device
- An Asymptotic Analysis of a Transient p-n-Junction Model
Cited In (12)
- Uniform asymptotic error estimates for semiconductor device and electrochemistry equations
- A Singular Perturbation Analysis of the Transient Semiconductor Device Equations
- The Asymptotic Solution of a Semiconductor Device Problem Involving Reverse Bias
- A Singular Perturbation Analysis for the Transient Semiconductor Device Equations in One Space Dimension
- An Asymptotic Analysis of a Transient p-n-Junction Model
- Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case
- Initial time layer problem for quantum drift-diffusion model
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