Initial transients of solutions of the semiconductor device equations

DOI10.1016/0898-1221(90)90263-JzbMATH Open0788.65120OpenAlexW1971745641MaRDI QIDQ1813632FDOQ1813632

Authors: Peter Szmolyan 

Publication date: 25 June 1992

Published in: Computers & Mathematics with Applications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/0898-1221(90)90263-j

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zbMATH Keywords

numerical examplesconvection-diffusion equationsPoisson equationsingular perturbationmethod of characteristicssemiconductor devicesinitial layer equations

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Numerical aspects of the method of characteristics for initial value and initial-boundary value problems involving PDEs (65M25) Applications to the sciences (65Z05)

Cites Work

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• Time-dependent solutions of a nonlinear system arising in semiconductor theory
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• A system of convection-diffusion equations with small diffusion coefficient arising in semiconductor physics
• A Singular Perturbation Analysis of the Transient Semiconductor Device Equations
• An Asymptotic Analysis of a Transient p-n-Junction Model

Cited In (7)

• Title not available (Why is that?)
• Title not available (Why is that?)
• ASYMPTOTIC METHODS FOR TRANSIENT SEMICONDUCTOR DEVICE EQUATIONS
• A Singular Perturbation Analysis of the Transient Semiconductor Device Equations
• A Singular Perturbation Analysis for the Transient Semiconductor Device Equations in One Space Dimension
• Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case
• Title not available (Why is that?)

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