The Asymptotic Solution of a Semiconductor Device Problem Involving Reverse Bias
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Publication:3487789
DOI10.1137/0150030zbMATH Open0706.34054OpenAlexW2089437236MaRDI QIDQ3487789FDOQ3487789
Authors: Robert E. jun. O'Malley, Christian Schmeiser
Publication date: 1990
Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1137/0150030
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Cited In (5)
- ON A NEW SCALING FOR SEMICONDUCTOR DEVICE EQUATIONS AND ITS ASYMPTOTIC ANALYSIS
- A Singular Perturbation Analysis of Reverse-Biased Semiconductor Diodes
- Title not available (Why is that?)
- On Strongly Reverse Biased Semiconductor Diodes
- Electrodiffusional free boundary problem, in a bipolar membrane (semiconductor diode), at a reverse bias for constant current
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