A Singular Perturbation Analysis of Reverse-Biased Semiconductor Diodes
From MaRDI portal
Publication:3035598
DOI10.1137/0520024zbMath0693.34015OpenAlexW1978456211WikidataQ57386802 ScholiaQ57386802MaRDI QIDQ3035598
Lucia Gastaldi, A. C. S. Capelo, Franco Brezzi
Publication date: 1989
Published in: SIAM Journal on Mathematical Analysis (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1137/0520024
Nonlinear boundary value problems for ordinary differential equations (34B15) Growth and boundedness of solutions to ordinary differential equations (34C11) Singular perturbations for ordinary differential equations (34E15) Electro- and magnetostatics (78A30)
Related Items
Quasi‐variational inequality and shape optimization for solution of a free boundary problem ⋮ ON A NEW SCALING FOR SEMICONDUCTOR DEVICE EQUATIONS AND ITS ASYMPTOTIC ANALYSIS ⋮ Adaptive finite element approximation for steady-state Poisson-Nernst-Planck equations ⋮ A method for proving uniqueness theorems for the stationary semiconductor device and electrochemistry equations ⋮ Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case ⋮ Numerical simulation of semiconductor devices ⋮ Uniqueness results for the steady-state electrodiffusion equations in the case of monotonic potentials and multiple junctions ⋮ A virtual element method for the steady-state Poisson-Nernst-Planck equations on polygonal meshes
