ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II

DOI10.1108/EB009992MaRDI QIDQ3756464zbMATH OpenOpenAlexFDO

Authors M. S. Mock

Publication date 1984

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/eb009992

zbMATH Keywords

Scharfetter-Gummel methodcontinuity equations of stationary semiconductor device models

Mathematics Subject Classification ID

Nonlinear boundary value problems for linear elliptic equations (35J65) Stability and convergence of numerical methods for boundary value problems involving PDEs (65N12) Motion of charged particles (78A35) Applications to the sciences (65Z05)

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Cites work

• scientific article; zbMATH DE number 3844984 (Why is no real title available?)
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
• Theory of the flow of electrons and holes in Germanium and other semiconductors

Cited in

(25)

• Metodi misti di exponential fitting per le equazioni di continuita' della corrente
• scientific article; zbMATH DE number 176679 (Why is no real title available?)
• scientific article; zbMATH DE number 3883568 (Why is no real title available?)
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, III
• scientific article; zbMATH DE number 665490 (Why is no real title available?)
• Numerical simulation of semiconductor devices
• Generation of oriented three‐dimensional Delaunay grids suitable for the control volume integration method
• Inverse average type tetrahedral finite-element schemes for the stationary semiconductor device equations
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR TIME‐DEPENDENT SEMICONDUCTOR MODELS
• MIXED FINITE ELEMENT APPROACH AND NONLINEAR IMPLICIT SCHEMES FOR DRIFT‐DIFFUSION EQUATION SOLUTION OF 2D HETEROJUNCTION SEMICONDUCTOR DEVICES
• Convergence analysis of a partial differential algebraic system from coupling a semiconductor model to a circuit model
• Discretization of semiconductor device problems. II
• Semiconductor device modelling from the numerical point of view
• DELAUNAY PARTITIONING IN THREE DIMENSIONS AND SEMICONDUCTOR MODELS
• A SCALING METHOD IN THE NUMERICAL ANALYSIS SOLUTION OF THE CURRENT CONTINUITY EQUATIONS IN SEMICONDUCTOR ANALYSIS
• Hexahedral finite elements for the stationary semiconductor device equations
• Analysis of the SG discretizatioin scheme on a multi-dimensional domain — application to impact ionization
• An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
• Mapped discretization strategies for curvilinear adaptively redistributed grids in semiconductor device modeling
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
• A NECESSARY CONDITION ON DISCRETIZATION SCHEMES FOR DEVICE SIMULATION
• Numerical solution of second-order elliptic equations on plane domains
• On the composite discontinuous Galerkin method for simulations of electric properties of semiconductor devices
• scientific article; zbMATH DE number 4084948 (Why is no real title available?)
• scientific article; zbMATH DE number 4098685 (Why is no real title available?)

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