Inverse average type tetrahedral finite-element schemes for the stationary semiconductor device equations

DOI10.1016/0377-0427(92)90053-ZzbMath0797.65107MaRDI QIDQ1208552

Fawang Liu, John J. H. Miller

Publication date: 16 May 1993

Published in: Journal of Computational and Applied Mathematics (Search for Journal in Brave)

zbMATH Keywords

stationary semiconductor device equations; inverse average tetrahedral finite element schemes

Mathematics Subject Classification ID

35K60: Nonlinear initial, boundary and initial-boundary value problems for linear parabolic equations

65N30: Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs

78M10: Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory

78A55: Technical applications of optics and electromagnetic theory

65Z05: Applications to the sciences

Cites Work

• Numerical simulation of semiconductor devices
• On inequalities of Korn's type. II: Applications to linear elasticity
• Inverse-Average-Type Finite Element Discretizations of Selfadjoint Second-Order Elliptic Problems
• Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
• Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models
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