Inverse average type tetrahedral finite-element schemes for the stationary semiconductor device equations
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Publication:1208552
Technical applications of optics and electromagnetic theory (78A55) Nonlinear initial, boundary and initial-boundary value problems for linear parabolic equations (35K60) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Applications to the sciences (65Z05) Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory (78M10)
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Cites work
- scientific article; zbMATH DE number 4160066 (Why is no real title available?)
- scientific article; zbMATH DE number 3666132 (Why is no real title available?)
- scientific article; zbMATH DE number 3690626 (Why is no real title available?)
- scientific article; zbMATH DE number 3459826 (Why is no real title available?)
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
- Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I
- Inverse-Average-Type Finite Element Discretizations of Selfadjoint Second-Order Elliptic Problems
- Numerical simulation of semiconductor devices
- On inequalities of Korn's type. II: Applications to linear elasticity
- Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models
Cited in
(4)- A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations
- Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence
- Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I
- Inverse-Average-Type Finite Element Discretizations of Selfadjoint Second-Order Elliptic Problems
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