Inverse average type tetrahedral finite-element schemes for the stationary semiconductor device equations

DOI10.1016/0377-0427(92)90053-ZzbMATH Open0797.65107MaRDI QIDQ1208552FDOQ1208552

Authors: Fawang Liu, John J. H. Miller 

Publication date: 16 May 1993

Published in: Journal of Computational and Applied Mathematics (Search for Journal in Brave)

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zbMATH Keywords

stationary semiconductor device equationsinverse average tetrahedral finite element schemes

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Nonlinear initial, boundary and initial-boundary value problems for linear parabolic equations (35K60) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Applications to the sciences (65Z05) Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory (78M10)

Cites Work

• Title not available (Why is that?)
• Inverse-Average-Type Finite Element Discretizations of Selfadjoint Second-Order Elliptic Problems
• Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models
• Numerical simulation of semiconductor devices
• On inequalities of Korn's type. II: Applications to linear elasticity
• Title not available (Why is that?)
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
• Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I
• Title not available (Why is that?)
• Title not available (Why is that?)

Cited In (4)

• Inverse-Average-Type Finite Element Discretizations of Selfadjoint Second-Order Elliptic Problems
• Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence
• A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations
• Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I

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