scientific article; zbMATH DE number 1782852
From MaRDI portal
Publication:4545976
Recommendations
- Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I
- A Mixed Method for the Mixed Initial-Boundary Value Problems of Equations of Semiconductor Devices
- scientific article; zbMATH DE number 3990810
- Finite element solution of the fundamental equations of semiconductor devices. II.
- A triangular mixed finite element method for the stationary semiconductor device equations
Cited in
(33)- Finite Element Solution of Optimal Control Problems Arising in Semiconductor Modeling
- Finite element solution of the fundamental equations of semiconductor devices. II.
- An hybrid finite element method for a quasi-variational inequality modeling a semiconductor
- Inverse average type tetrahedral finite-element schemes for the stationary semiconductor device equations
- Hybrid variable finite elements for semiconductor devices
- Preconditioned CG-type methods for solving the coupled system of fundamental semiconductor equations
- MIXED FINITE ELEMENT APPROACH AND NONLINEAR IMPLICIT SCHEMES FOR DRIFT‐DIFFUSION EQUATION SOLUTION OF 2D HETEROJUNCTION SEMICONDUCTOR DEVICES
- scientific article; zbMATH DE number 4160066 (Why is no real title available?)
- scientific article; zbMATH DE number 4123234 (Why is no real title available?)
- The method of integral equations in the oblique derivative problem arising in semiconductor physics
- A two-dimensional finite element algorithm for the simultaneous solution of the semiconductor device equations with automatic convergence
- A Finite Element Approximation Theory for the Drift Diffusion Semiconductor Model
- scientific article; zbMATH DE number 4155827 (Why is no real title available?)
- Finite element analysis of semiconductor device equations with heat effect
- Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I
- Convergent finite element discretizations of the density gradient equation for quantum semiconductors
- A SCALING METHOD IN THE NUMERICAL ANALYSIS SOLUTION OF THE CURRENT CONTINUITY EQUATIONS IN SEMICONDUCTOR ANALYSIS
- scientific article; zbMATH DE number 1911047 (Why is no real title available?)
- The numerical simulation of the fully discrete mixed finite element solution for the CVD reactor equations
- scientific article; zbMATH DE number 844347 (Why is no real title available?)
- scientific article; zbMATH DE number 3990810 (Why is no real title available?)
- scientific article; zbMATH DE number 465137 (Why is no real title available?)
- scientific article; zbMATH DE number 4106227 (Why is no real title available?)
- A Mixed Method for the Mixed Initial-Boundary Value Problems of Equations of Semiconductor Devices
- scientific article; zbMATH DE number 4066256 (Why is no real title available?)
- New additive difference method for solving semiconductor problems
- scientific article; zbMATH DE number 5679679 (Why is no real title available?)
- A mixed problem for electrostatic potential in semiconductors
- Projection finite element methods for semiconductor device equations
- A 3D Rectangular Mixed Finite Element Method to Solve the Stationary Semiconductor Equations
- A MASS‐LUMPING SEMIDISCRETIZATION OF THE SEMICONDUCTOR DEVICE EQUATIONS
- ACCURATE COMPUTATION OF ELECTRIC FIELD IN REVERSE‐BIASED SEMICONDUCTOR DEVICES: A MIXED FINITE‐ELEMENT APPROACH
- scientific article; zbMATH DE number 193955 (Why is no real title available?)
This page was built for publication:
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4545976)