An hybrid finite element method for a quasi-variational inequality modeling a semiconductor
Nonlinear boundary value problems for nonlinear elliptic equations (35J66) PDEs in connection with semiconductor devices (35Q81) Stability and convergence of numerical methods for boundary value problems involving PDEs (65N12) Numerical solution of discretized equations for boundary value problems involving PDEs (65N22) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Statistical mechanics of semiconductors (82D37) Methods of quasi-Newton type (90C53)
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- Iterative solution of the drift-diffusion equations
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- Parallel solvers for the depletion region identification in metal semiconductor field effect transistors
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- Research on parallel finite element methods for the drift-diffusion model in semiconductor device simulations
- Study of a finite volume scheme for the drift-diffusion system. Asymptotic behavior in the quasi-neutral limit
- Uniform estimates and uniqueness of stationary solutions to the drift–diffusion model for semiconductors
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