A mixed problem for electrostatic potential in semiconductors

DOI10.1002/NUM.1690100607MaRDI QIDQ4314854zbMATH OpenOpenAlexFDO

Authors Riccardo Sacco

Publication date 2 April 1995

Published in Numerical Methods for Partial Differential Equations (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/num.1690100607

zbMATH Keywords

electrostatic potentialfinite element methodsemiconductor problem

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Applications to the sciences (65Z05) Electro- and magnetostatics (78A30)

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Cites work

• A COMPARISON OF SOME METHODS FOR THE SOLUTION OF THE NONLINEAR POISSON EQUATION IN SEMICONDUCTOR DEVICE MODELLING

Cited in

(7)

• Quantum-corrected drift-diffusion models for transport in semiconductor devices
• Representation of the solution to a model problem in semiconductor physics
• Finite element approximation of electrostatic potential in one dimensional multilayer structures with quantized electronic charge
• ACCURATE COMPUTATION OF ELECTRIC FIELD IN REVERSE‐BIASED SEMICONDUCTOR DEVICES: A MIXED FINITE‐ELEMENT APPROACH
• scientific article; zbMATH DE number 1432308 (Why is no real title available?)
• An hybrid finite element method for a quasi-variational inequality modeling a semiconductor
• An interface formulation for the Poisson equation in the presence of a semiconducting single-layer material

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