A Finite Element Approximation Theory for the Drift Diffusion Semiconductor Model
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Publication:5203634
DOI10.1137/0728023zbMATH Open0725.65120OpenAlexW2126264088MaRDI QIDQ5203634FDOQ5203634
Authors: Joseph W. Jerome, Thomas Kerkhoven 
Publication date: 1991
Published in: SIAM Journal on Numerical Analysis (Search for Journal in Brave)
Full work available at URL: https://semanticscholar.org/paper/b7310b943640cf1277708fa66cec46b64413032f
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Nonlinear elliptic equations (35J60) PDEs in connection with optics and electromagnetic theory (35Q60) Stability and convergence of numerical methods for boundary value problems involving PDEs (65N12) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Applications to the sciences (65Z05)
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- A tight nonlinear approximation theory for time dependent closed quantum systems
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- Higher order expansions in finite ion size via Poisson-Nernst-Planck systems with Bikerman's local hard-sphere potential
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- Mixed finite element method for modified Poisson-Nernst-Planck/Navier-Stokes equations
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- Simulation of visible and ultra-violet group-III nitride light emitting diodes
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