ACCURATE COMPUTATION OF ELECTRIC FIELD IN REVERSE‐BIASED SEMICONDUCTOR DEVICES: A MIXED FINITE‐ELEMENT APPROACH

DOI10.1108/EB009991MaRDI QIDQ3756468zbMATH OpenOpenAlexFDO

Authors A. Savini, L. Donatella Marini

Publication date 1984

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/eb009991

zbMATH Keywords

finite element methodfree boundary problemreverse-biased semiconductor devices

Mathematics Subject Classification ID

Partial differential equations of mathematical physics and other areas of application (35Q99) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Motion of charged particles (78A35) Applications to the sciences (65Z05)

Recommendations

• A mixed problem for electrostatic potential in semiconductors
• scientific article; zbMATH DE number 169308
• scientific article; zbMATH DE number 4211450
• scientific article; zbMATH DE number 24446
• scientific article; zbMATH DE number 1782852

Cites work

• scientific article; zbMATH DE number 3725605 (Why is no real title available?)
• Error estimates for the finite element solution of variational inequalities. Part I. primal theory
• Error estimates for the finite element solution of variational inequalities. Part II. Mixed methods
• Sur la régularité de la solution d'inéquations elliptiques

Cited in

(4)

• Self-adaptive finite-element simulation of bipolar, strongly reverse-biased pn-junctions
• Mixed finite element methods for elliptic problems
• Postprocessing schemes for some mixed finite elements
• A mixed problem for electrostatic potential in semiconductors

This page was built for publication: ACCURATE COMPUTATION OF ELECTRIC FIELD IN REVERSE‐BIASED SEMICONDUCTOR DEVICES: A MIXED FINITE‐ELEMENT APPROACH

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3756468)