ACCURATE COMPUTATION OF ELECTRIC FIELD IN REVERSE‐BIASED SEMICONDUCTOR DEVICES: A MIXED FINITE‐ELEMENT APPROACH

DOI10.1108/EB009991zbMATH Open0619.65120OpenAlexW2006868701MaRDI QIDQ3756468FDOQ3756468

Authors: A. Savini, L. Donatella Marini 

Publication date: 1984

Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb009991

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zbMATH Keywords

finite element methodfree boundary problemreverse-biased semiconductor devices

Mathematics Subject Classification ID

Partial differential equations of mathematical physics and other areas of application (35Q99) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Motion of charged particles (78A35) Applications to the sciences (65Z05)

Cites Work

• Error estimates for the finite element solution of variational inequalities. Part I. primal theory
• Title not available (Why is that?)
• Sur la régularité de la solution d'inéquations elliptiques
• Error estimates for the finite element solution of variational inequalities. Part II. Mixed methods

Cited In (4)

• Self-adaptive finite-element simulation of bipolar, strongly reverse-biased pn-junctions
• Postprocessing schemes for some mixed finite elements
• Mixed finite element methods for elliptic problems
• A mixed problem for electrostatic potential in semiconductors

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