Three-dimensional exponentially fitted conforming tetrahedral finite elements for the semiconductor continuity equations
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Publication:1399154
DOI10.1016/S0168-9274(02)00224-6zbMath1028.82024WikidataQ59416214 ScholiaQ59416214MaRDI QIDQ1399154
Publication date: 30 July 2003
Published in: Applied Numerical Mathematics (Search for Journal in Brave)
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Cites Work
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- Some upwinding techniques for finite element approximations of convection-diffusion equations
- The patch test as a validation of a new finite element for the solution of convection-diffusion equations
- Hexahedral finite elements for the stationary semiconductor device equations
- A triangular mixed finite element method for the stationary semiconductor device equations
- Inverse-Average-Type Finite Element Discretizations of Selfadjoint Second-Order Elliptic Problems
- Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
- Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models
- A MASS‐LUMPING SEMIDISCRETIZATION OF THE SEMICONDUCTOR DEVICE EQUATIONS
- A new exponentially fitted triangular finite element method for the continuity equations in the drift-diffusion model of semiconductor devices
- A Tetrahedral Mixed Finite Element Method for the Stationary Semiconductor Continuity Equations
- An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
- Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
- Equivalent Norms for Sobolev Spaces
- RELAXATION METHODS APPLIED TO DETERMINE THE MOTION, IN TWO DIMENSIONS, OF A VISCOUS FLUID PAST A FIXED CYLINDER
