A Tetrahedral Mixed Finite Element Method for the Stationary Semiconductor Continuity Equations
DOI10.1137/0731010zbMATH Open0797.65106OpenAlexW2004326448MaRDI QIDQ4294764FDOQ4294764
Authors: John J. H. Miller, Song Wang
Publication date: 18 May 1994
Published in: SIAM Journal on Numerical Analysis (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1137/0731010
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numerical resultsexponential fittingdiodesemi-conductorPetrov-Galerkin mixed finite element methodstationary semiconductor continuity equations
Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Error bounds for boundary value problems involving PDEs (65N15) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Applications to the sciences (65Z05)
Cited In (14)
- On a Petrov-Galerkin method for the electrical and thermal behaviour of semiconductor devices in two dimensions
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- A conservative and monotone mixed-hybridized finite element approximation of transport problems in heterogeneous domains
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- A three-dimensional mixed finite-element approximation of the semiconductor energy-transport equations
- A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations
- The finite volume method and application in combinations
- A robust hybridizable discontinuous Galerkin scheme with harmonic averaging technique for steady state of real-world semiconductor devices
- A fast algorithm to compute the moments of the exponential function for application to semiconductor modelling
- A 3D Rectangular Mixed Finite Element Method to Solve the Stationary Semiconductor Equations
- On the non-existence of 𝜀-uniform finite difference methods on uniform meshes for semilinear two-point boundary value problems
- Three-dimensional exponentially fitted conforming tetrahedral finite elements for the semiconductor continuity equations
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