scientific article; zbMATH DE number 1276033
The authors presented a new finite element scheme for the numerical solution of a triangular decomposition of the following boundary problem: \[ \begin{cases} \text{Find } u\in H^{1}(\Omega) \text{ such that}\\ L(u)=-\text{div }\underline{J}(u)=R, &\text{in }\Omega \subset {\mathbb{R}}^{2},\\ \underline{J}(u)=\mu (\underline{\nabla}u- u\underline{\nabla}\psi),\\ u=\gamma, &\text{on }\Gamma _0\subseteq \Gamma,\\ \underline{J}(u)\cdot \underline{n}=0, &\text{on }\Gamma _{1}=\Gamma \setminus \Gamma _{0}, \end{cases} \] where \(\Omega \) is an open bounded set of \({\mathbb R}^{2}\) with a Lipschitz continuous boundary \(\Gamma \) and an outward oriented normal unit vector \( \underline{n}.\) In most application \(\Omega \) is typically a rectangle and the boundary conditions are respectively imposed. In the present article the authors work with a Galerkin finite element method using a suitable trial space of approximate L-splines, a new family of Petrov-Galerkin finite element methods on triangles is devised for singularly perturbed elliptic problems in two dimensions. The motivation of the method is explained and the construction of the finite element space and its basic properties are discussed. The resulting method is nonconforming over the hole domain \(\overline{\Omega}\).
- scientific article; zbMATH DE number 733532
- A new exponentially fitted triangular finite element method for the continuity equations in the drift-diffusion model of semiconductor devices
- MIXED FINITE ELEMENT APPROACH AND NONLINEAR IMPLICIT SCHEMES FOR DRIFT‐DIFFUSION EQUATION SOLUTION OF 2D HETEROJUNCTION SEMICONDUCTOR DEVICES
- A Finite Element Approximation Theory for the Drift Diffusion Semiconductor Model
- Numerical Approximation of a Drift‐Diffusion Model for Semiconductors with Nonlinear Diffusion
- Analysis of a finite element method for the drift-diffusion semiconductor device equations: The multidimensional case
- scientific article; zbMATH DE number 4160066
- Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case
- Publication:4885535
- Error Estimates for a Finite Element Method for the Drift Diffusion Semiconductor Device Equations
- Three-dimensional exponentially fitted conforming tetrahedral finite elements for the semiconductor continuity equations
- Exponentially fitted shape functions for advection-dominated flow problems in two dimensions
- Convergence analysis for an exponentially fitted finite volume method
- Genetic exponentially fitted method for solving multi-dimensional drift-diffusion equations
- Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case
- A new exponentially fitted triangular finite element method for the continuity equations in the drift-diffusion model of semiconductor devices
- Error Estimates for a Finite Element Method for the Drift-Diffusion Semiconductor Device Equations: The Zero Diffusion Case
- A stabilized finite element method for modeling of gas discharges
- A brief survey on numerical methods for solving singularly perturbed problems
- A robust solver for \(\boldsymbol{H}(\text{curl})\) convection-diffusion and its local Fourier analysis
- Analysis of the cell boundary element methods for convection dominated convection-diffusion equations
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